TLE7181EM Datasheet, PDF (16/29 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7181EM
Description and Electrical Characteristics
Electrical Characteristics MOSFET Drivers
V_S = 7.0 to 34V, T_j = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
ENA and Low quiescent current mode
5.1.51 ENA propagation time to output
stages switched off
t_{PENA_H-L}
–
2.0
3.0
µs
–
5.1.52 Low time of ENA signal without
t_RST0
–
–
1.2
µs
–
clearing error register
5.1.53 High time of ENA signal after ENA t_RST1
4
rising edge for error logic active
5.75 7
µs –
5.1.54 go to sleep time
t_sleep
310 415 540 µs –
5.1.55 wake up time
t_wake
–
50
100 µs
C_REG=2.2µF;
C_BS=330nF
1) Not subject to production test, specified by design.
2) V_diode is the bulk diode of the external low side MOSFET
3) normally no error flag; Error flag might by triggered by under voltage VREG caused by very high load current
Data Sheet
16
Rev 1.1, 2010-09-30