TLE7181EM Datasheet, PDF (13/29 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7181EM
Description and Electrical Characteristics
5.1.9 Electrical Characteristics
Electrical Characteristics MOSFET Drivers
V_S = 7.0 to 34V, T_j = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
Control inputs
5.1.1 Low level input voltage of PWM; V_{I_LL}
–
–
1.0
V
–
DIR
5.1.2 High level input voltage of PWM; V_{I_HL}
2.0
–
–
V
–
DIR
5.1.3 Input hysteresis of PWM; DIR
d_VI
5.1.4
PWM; DIR pull-down resistors to R_IL
GND
100 200 –
20
–
50
mV –
kΩ –
5.1.5 Low level input voltage of ENA
V_{E_LL}
–
–
0.75 V
–
5.1.6 High level input voltage of ENA V_{E_HL}
2.1
–
–
V
–
5.1.7 Input hysteresis of ENA
d_VE
50
200 –
mV –
5.1.8 ENA pull-down resistor to GND R_IL
70
125 200 kΩ –
5.1.9 Low level input voltage of DRVDIS V_{D_LL}
–
–
1.0
V
–
5.1.10 High level input voltage of DRVDIS V_{D_HL}
2.0
–
–
V
–
5.1.11 Input hysteresis of DRVDIS
d_VD
100 200 –
mV –
5.1.12 DRVDIS pull-up resistor to internal R_DH
supply
30
50
80
kΩ –
MOSFET driver output
5.1.13 Output source resistance
R_Sou
2
5.1.14 Output sink resistance
R_Sink
2
5.1.15 High level output voltage Gxx vs. V_Gxx1
–
Sxx
5.1.16 High level output voltage Gxx vs. V_Gxx2
–
Sxx
5.1.17 High level output voltage GHx vs. V_GHx3
–
SHx¹⁾
5.1.18 High level output voltage GLx vs. V_GLx3
–
GND¹⁾
–
13.5 Ω
–
9.0
Ω
11
15
V
11
13.5 V
V_VS-1.5 –
V
V_VS-0.5 –
V
I_Load=-20mA
I_Load=20mA
13.5V≤V_VS≤34V;
I_Load=0mA
13.5V≤V_VS≤34V;
C_Load=20nF;
D.C.=50%;
f_PWM=20kHz
7.0V<V_VS<13.5V;
C_Load=20nF;
D.C.=50%;
f_PWM=20kHz
7.0V<V_VS<13.5V;
C_Load=20nF;
f_PWM=20kHz &
D.C.=50%;
or D.C=100%
Data Sheet
13
Rev 1.1, 2010-09-30