TLE7181EM Datasheet, PDF (14/29 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7181EM
Description and Electrical Characteristics
Electrical Characteristics MOSFET Drivers
V_S = 7.0 to 34V, T_j = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
5.1.19 High level output voltage GHx vs. V_GHx4
5.0
–
–
V
V_VS=7.0V;
SHx¹⁾²⁾
+V_diode
C_Load=20nF;
D.C.=95%;
f_PWM=20kHz;
passive
freewheeling
5.1.20 High level output voltage GHx vs. V_GHx5
5.0
–
–
V
V_VS=7.0V;
SHx¹⁾
C_Load=20nF;
D.C.=95%;
f_PWM=20kHz
5.1.21 High level output voltage GLx vs. V_GLx5
6.0
–
–
V
V_VS=7.0V;
SLx¹⁾
C_Load=20nF;
D.C.=95%;
f_PWM=20kHz
5.1.22 High level output voltage GHx vs. V_GHx5
10
–
–
V
7.0V≤V_VS≤13.5V;
SHx¹⁾
C_Load=20nF;
D.C.=100%
5.1.23 High level output voltage GLx vs. V_GLx5
6.5
–
–
V
V_VS=7.0V;
SLx¹⁾
C_Load=20nF;
D.C.=100%
5.1.24 Rise time
5.1.25 Fall time
t_rise
–
250 –
ns
C_Load=11nF;
t_fall
–
200 –
ns
R_Load=1Ω;
V_VS=7V;
20-80%
5.1.26 High level output voltage (in
passive clamping)¹⁾
V_GxxUV
–
–
1.2
V
Sleep mode or
VS_UVLO
5.1.27 Pull-down resistor at BHx to GND R_BHUVx –
–
85
kΩ Sleep mode or
VS_UVLO
5.1.28 Pull-down resistor at VREG to GND R_VRUV –
–
30
kΩ Sleep mode or
VS_UVLO
5.1.29 Bias current into BHx
I_BHx
–
–
150
µA
V_CBS>5V;
no switching
5.1.30 Bias current out of SHx
5.1.31 Bias current out of SL
I_SHx
–
I_SL
–
40
–
µA
V_SHx=V_SL;
ENA=HIGH;
affected highside
output stage static
on;
V_CBS>5V
–
1.4
mA 0≤V_SHx≤V_VS+1V;
ENA=HIGH;
no switching;
V_CBS>5V
Data Sheet
14
Rev 1.1, 2010-09-30