1EDS20I12SV Datasheet, PDF (24/33 Pages) Infineon Technologies AG – Single-channel isolated IGBT Driver

EiceDRIVER™ Safe
1EDS - slew rate control IGBT driver IC
Table 8
Gate driver
Parameter
Symbol
Values
Unit Test condition
Min. Typ. Max.
Detection of gate current level 9
Detection of gate current level 10
Detection of gate current level 11
tbd
V_VCC2- tbd
0.91
0.83V≤V_SPEED≤1.11
V
tbd
V_VCC2- tbd
V
0.55V≤V_SPEED≤0.83
1.0
V
tbd
V_VCC2- tbd
1.57
0V≤V_SPEED≤0.55V
V_RSENSE hyseresis
Low level output voltage terminal OFF
tbd
V_OFFL
–
–
tbd
mV
V_EE2+ V
tbd
–
V_EE2+0.3 V_EE2+
tbd
–
V_EE2+2.3 V_EE2+
tbd
–
V_EE2+7 –
Low level output voltage terminal SOFF
V_SOFFL
–
–
V_EE2+
tbd
–
V_EE2+0.3 V_EE2+
tbd
–
V_EE2+7.3 V_EE2+
tbd
Input voltage terminal ON
V_OH,ON
tbd
–
–
V_OL,ON
Turn-on clamping voltage terminal ON
V_ON,ON
–
V_VCC2-
tbd
V_VCC2-
tbd
Turn-off threshold voltage terminal GATE VGATE,th –
3
–
Preboost time
T_PRB
–
Speed setting propagation delay ²⁾
T_SPEED
–
Fall time
T_FALL
–
Turn-on propagation delay without PMOS T_PDON
–
Turn-off propagation delay
T_PDOFF
–
135
tbd
ns
–
120
µs
tbd
tbd
460
tbd
ns
460
tbd
Turn-on propagation delay variation over T_PDONt
tbd
–
tbd
junction temperature ²⁾
Turn-off propagation delay variation over T_PDOFFt –
–
tbd
junction temperature ²⁾
Matching delay (T_PDON - T_PDOFF)
MT
–
–
tbd
Matching delay over temperature (T_PDONt - MT_t
–
–
tbd
T_PDOFFt) ²⁾
1) Default state after power on (V_VCC1 > V_UVLOH1)
2) The Parameter is not subject to production test - verified by design / characterization
I_OFFL = 20 mA
I_OFFL = 200 mA
I_OFFL = 1 A
I_OFFL = 2 A ²⁾
I_SOFFL = 20 mA
I_SOFFL = 200 mA
I_SOFFL = 1 A
I_on = 8 mA
I_on = -8 mA
IGBT is turn on
T_A = 25°C
T_A = 25°C
T_A = 25°C
Target datasheet
24
<Revision 0.73>, 05.06.2014