 English |
|
|
|
|
|
|
|
| 1EDS20I12SV Datasheet, PDF (15/33 Pages) Infineon Technologies AG – Single-channel isolated IGBT Driver | |||
| |||
| ◁ |
EiceDRIVER⢠Safe
1EDS - slew rate control IGBT driver IC
1EDS-SRC
VCC2
RSENSE
ON
GATE
GND2
vRS
preboost
igg
1.33V at VEE2=8V
preboost value =
f(VEE2, RPRB1, RPRB2)
0.516V (step 3)
RS
vRS(t)
external
turn-on
igg(t)
von(t)
Rg int
vGE(t)
Phases:
turn-on current source
t
135ns <100ns
VCC2 clamping
vON
v VCC2
VMiller
VCC2-Von=6V
vGE
VGE(th)
0
t
VEE2
t0
t1
t2
t3
Figure 4 Timing diagram for turn-on
Finally, the IGBT gate voltage saturates at VCC2 in the VCC2 clamping phase. The driver clamps the gate
voltage of the external P-channel transistor 6 V below VCC2 according to Figure 4. This provides a low-ohmic
connection between the gate of the IGBT and VCC2
It is good board layout engineering to keep tight proximity of the control loop consisting of driver IC, sense
resistor, and p-channel MOSFET to avoid oscillations.
4.5
Preboost setting
The preboost timer is always active, both in bipolar or unipolar power supply configuration. The only exception is
if the IGBT is turned on via EN according to section 4.7
The preboost current may be set by a simple voltage divider for bipolar gate supply as well as for unipolar
supply. In case of bipolar power supply, connect the voltage divider between GND2, PRB, and VEE2. In case of
a unipolar power supply, use VCC2, PRB, and VEE2 according to Figure 5.
Target datasheet
15
<Revision 0.73>, 05.06.2014
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese