HYS64D16000GU-7-A Datasheet, PDF (22/30 Pages) Infineon Technologies AG – Unbuffered DDR SDRAM-Modules

HYS[64/72]D[16000/32020]GU-[7/8]-A
Unbuffered DDR SDRAM-Modules
Electrical Characteristics
10) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,
measured between V_OH(ac) and V_OL(ac).
11) CAS Latency 1.5 operation is supported on DDR200 devices only
12) t_RPRES is defined for CL = 1.5 operation only
13) For each of the terms, if not already an integer, round to the next highest integer. t_CK is equal to the actual system clock
cycle time.
14) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Data Sheet
22
Rev. 1.02, 2003-11