HYS64D32020GDL Datasheet, PDF (17/31 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

Table 10 I_DD Specification
HYS64D[1600x/32020]GDL–[5/6/7/8]–B
Small Outline DDR SDRAM Modules
Electrical Characteristics
Unit
Note¹⁾²⁾
128MB
256MB
128MB
256MB
× 64
× 64
× 64
× 64
1 Rank
2 Ranks
1 Rank
2 Ranks
–8
–8
–7
–7
3)
Symbol typ. max. typ. max. typ. max. typ. max.
3)4)
I_DD0
288 380 456 580
308
420 516 660 mA
5)
I_DD1
332 420 500 620
376
460 584 700 mA
5)
I_DD2P
20
28
40
56
22
32
44
64
mA
5)
I_DD2F
120 140 240 280
140
160 280 320 mA
5)
I_DD2Q
72
88
144 176
376
100 752 200 mA
5)
I_DD3P
52
64
104 128 60
72
120 144 mA
3)4)
I_DD3N
168 200 336 400
208
240 416 480 mA
3)
I_DD4R
356 440 524 640
428
520 636 760 mA
3)
I_DD4W
384 480 552 680 476 560 684 800 mA
5)
I_DD5
504.8 680 672.8 880
540
720 748 960 mA
3)4)
I_DD6
6
6
12
12
6
6
12
12
mA
5)
I_DD7
632 880 800 1080 720
940 928 1180 mA
3)4)
1) DRAM component currents only
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the component I_DDx data sheet values as:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending on
load conditions
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
17
V1.2, 2003-08