HYS64D32020GDL Datasheet, PDF (16/31 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

Table 9 I_DD Specification
HYS64D[1600x/32020]GDL–[5/6/7/8]–B
Small Outline DDR SDRAM Modules
Electrical Characteristics
Unit
Note¹⁾²⁾
128MB
256MB
256MB
× 64
× 64
× 64
1 Rank
2 Ranks
2 Ranks
–6
–6
–5
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
typ. max.
typ.
max.
typ.
max.
352
460
604
740
640
776
mA
3)
416
500
668
780
700
836
mA
3)4)
24
36
48
72
48
72
mA
5)
180
220
360
440
368
448
mA
5)
99
112
198
224
192
272
mA
5)
72
84
144
168
136
192
mA
5)
252
280
504
560
480
592
mA
5)
496
640
748
920
800
996
mA
3)4)
564
660
816
940
840
1016
mA
3)
574
760
826
1040
860
1076
mA
3)
5
5
10
10
10
10
mA
5)
872
1140
1280
1536
1280
1536
mA
3)4)
1) DRAM component currents only
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the component I_DDx data sheet values as:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending
on load conditions
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
16
V1.2, 2003-08