ICB2FL02G Datasheet, PDF (10/55 Pages) Infineon Technologies AG – Smart Ballast Control IC for Fluorescent Lamp Ballasts

2^nd Generation FL-Controller for FL-Ballasts
HSVCC (High-side supply voltage, Pin 18)
This pin provides the power supply of the high-
side ground related section of the IC. An
external capacitor between pin 17 and pin 18
acts like a floating battery which has to be
recharged cycle by cycle via high voltage diode
from low-side supply voltage during on-time of
the low-side MOSFET. There is an UVLO
threshold with hysteresis that enables high-side
section at 10.1V and disables it at 8.4V.
HSGD (High-side Gate drive, Pin 19)
The Gate of the high-side MOSFET in a half-
bridge inverter topology is controlled by this pin.
There is an active L-level during UVLO and a
limitation of the max H-level at 11.0 V during
normal operation. The switching characteristics
are the same as described for LSGD (pin 2). It
is recommended to use a resistor of about 10 Ω
between drive pin and Gate in order to avoid
oscillations and in order to shift the power
dissipation of discharging the Gate capacitance
into this resistor. The dead time between LSGD
signal and HSGD signal is self adapting
between 1.05µs and 2.0µs (typically).
Not connected (Pin 20)
This pin is internally not connected.
Preliminary Datasheet
Page 10 of 55
ICB2FL02G
V1.2