7005S55PFG Datasheet, PDF (9/21 Pages) Integrated Device Technology – HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM

IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage⁽⁵⁾
7005X15
Com'l Only
7005X17
Com'l Only
7005X20
Com'l, Ind
& Military
7005X25
Com'l &
Military
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
tEW
Chip Enable to End-of-Write⁽³⁾
15
____
17
____
20
____
25
____
ns
12
____
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
tAS
Address Set-up Time⁽³⁾
12
____
0
____
12
____
0
____
15
____
0
____
20
____
ns
0
____
ns
tWP
Write Pulse Width
12
____
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
tHZ
Output High-Z Time^(1,2)
tDH
Data Hold Time⁽⁴⁾
tWZ
Write Enable to Output in High-Z^(1,2)
tOW
Output Active from End-of-Write^(1,2,4)
10
____
10
____
15
____
15
____
ns
____
10
____
10
____
12
____
15
ns
0
____
0
____
0
____
0
____
ns
____
10
____
10
____
12
____
15
ns
0
____
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
5
____
ns
2738 tbl 14a
7005X35
Com'l, Ind
& Military
7005X55
Com'l, Ind
& Military
7005X70
Military Only
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
tEW
Chip Enable to End-of-Write⁽³⁾
35
____
55
____
70
____
ns
30
____
45
____
50
____
ns
tAW
Address Valid to End-of-Write
tAS
Address Set-up Time⁽³⁾
30
____
45
____
50
____
ns
0
____
0
____
0
____
ns
tWP
Write Pulse Width
25
____
40
____
50
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
tHZ
Output High-Z Time^(1,2)
tDH
Data Hold Time⁽⁴⁾
tWZ
Write Enable to Output in High-Z^(1,2)
tOW
Output Active from End-of-Write^(1,2,4)
15
____
30
____
40
____
ns
____
15
____
25
____
30
ns
0
____
0
____
0
____
ns
____
15
____
25
____
30
ns
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
NOTES:
2738 tbl 14b
1. Transition is measured 0mV from Low or High-impedance voltage with load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM, CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part number indicates power rating (S or L).
6.942