7005S55PFG Datasheet, PDF (5/21 Pages) Integrated Device Technology – HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM

IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the 0perating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
7005S
7005L
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max. Unit
|ILI|
Input Leakage Current⁽¹⁾
VCC = 5.5V, VIN = 0V to VCC
___
10
___
5
µA
|ILO|
Output Leakage Current
CE = VIH, VOUT = 0V to VCC
___
10
___
5
µA
VOL
Output Low Voltage
IOL = +4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
2738 tbl 08
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)
Symbol
Parameter
Test Condition
Min.
Typ.⁽¹⁾
VDR
VCC for Data Retention
VCC = 2V
2.0
___
ICCDR
tCDR⁽³⁾
tR⁽³⁾
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CE > VHC
VIN > VHC or < VLC
SEM > VHC
Mil. & Ind.
___
100
Com'l.
___
100
0
___
tRC⁽²⁾
___
NOTES:
1. TA = +25°C, VCC = 2V, and are not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed by characterization, but is not production tested.
Max. Unit
___
V
4000
µA
1500
___
ns
___
ns
2738 tbl 09
Data Retention Waveform
DATA RETENTION MODE
VCC
4.5V
VDR > _2V
tCDR
VDR
CE
VIH
4.5V
tR
VIH
2738 drw 05
6.542