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9DBV0941_17 Datasheet, PDF (6/18 Pages) Integrated Device Technology – 9-Output 1.8V HCSL Fanout Buffer with Zo = 100ohms
9DBV0941 DATASHEET
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the 9DBV0941. These ratings, which are standard
values for IDT commercially rated parts, are stress ratings only. Functional operation of the device at these or any other
conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods can affect product reliability. Electrical parameters are guaranteed only over the
recommended operating temperature range.
PARAMETER
Supply Voltage
SYMBOL
VDDx
CONDITIONS
Applies to VDD, VDDA and VDDIO
Input Voltage
VIN
Input High Voltage, SMBus VIHSMB
Storage Temperature
Ts
SMBus clock and data pins
Junction Temperature
Tj
Input ESD Protection ESD prot
Human Body Model
1 Guaranteed by design and characterization, not 100% tested in production.
2 Operation under these conditions is neither implied nor guaranteed.
3 Not to exceed 2.5V.
MIN
-0.5
-0.5
-65
2000
TYP
MAX
2.5
VDD+0.5
3.6
150
125
UNITS NOTES
V
1,2
V
1,3
V
1
°C
1
°C
1
V
1
Electrical Characteristics–Clock Input Parameters
TA = TCOM or TIND; Supply voltages per normal operation conditions; see Test Loads for loading conditions
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
Input Crossover Voltage -
DIF_IN
VCROSS
Cross over voltage
150
Input Swing - DIF_IN
VSWING
Differential value
300
Input Slew Rate - DIF_IN dv/dt
Measured differentially
0.4
Input Leakage Current
IIN
VIN = VDD , VIN = GND
-5
Input Duty Cycle
dtin
Measurement from differential waveform
40
Input Jitter - Cycle to Cycle JDIFIn
Differential measurement
0
1 Guaranteed by design and characterization, not 100% tested in production.
2 Slew rate measured through +/-75mV window centered around differential zero.
MAX
900
8
5
60
125
UNITS NOTES
mV
1
mV
1
V/ns 1,2
µA
%
1
ps
1
9-OUTPUT 1.8V HCSL FANOUT BUFFER WITH ZO = 100OHMS
6
MARCH 14, 2017