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ICS844S0258-07 Datasheet, PDF (4/21 Pages) Integrated Device Technology – Output enable signal for three LVDS outputs
ICS844S0258-07 Data Sheet
FEMTOCLOCK® CRYSTAL/LVCMOS-TO-LVDS/LVCMOS FREQUENCY SYNTHESIZER
Table 4C. LVDS DC Characteristics, VDD = VDDO_LVDS = 3.3V ± 5%, TA = 0°C to 70°C
Symbol
Parameter
Test Conditions
Minimum
VOD
VOD
VOS
VOS
Differential Output Voltage
VOD Magnitude Change
Offset Voltage
VOS Magnitude Change
300
1.15
Typical
400
1.30
Maximum
525
50
1.45
50
Units
mV
mV
V
mV
Table 5. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance
Shunt Capacitance
Test Conditions
Minimum
Typical
Fundamental
25
Maximum
50
7
Units
MHz

pF
Table 6. AC Characteristics, VDD = VDDO_LVCMOS = VDDO_LVDS = 3.3V ± 5%, TA = 0°C to 70°C
Symbol
Parameter
Test Conditions
Minimum
Typical
fout
tjit(Ø)
Output Frequency
RMS Phase
Noise Jitter;
NOTE 1
LVDS
LVCMOS
125MHz, Integration Range:
1.857MHz - 20MHz
125MHz, Integration Range:
1.857MHz - 20MHz
125
0.278
0.284
Phase Jitter
125MHz, (1.2MHz – 21.9MHz),
tj
Peak-to-Peak;
Evaluation Band: 0Hz - Nyquist
8.57
NOTE 2
(clock frequency/2)
tREFCLK_HF_RMS
Phase Jitter RMS; NOTE
3
125MHz,
25MHz crystal input
High Band: 1.5MHz - Nyquist
(clock frequency/2)
0.86
tREFCLK_LF_RMS
Phase Jitter RMS; NOTE
3
125MHz,
25MHz crystal input
Low Band: 10kHz - 1.5MHz
0.12
tR / tF
Output
Rise/Fall
Q[0:6]:
nQ[0:6]
30% to 70%, 15pF Load
70
Time
Q7
20% to 80%
400
odc
Output Duty Cycle
48
odc
Output Duty Cycle,
Bypass Mode
45
Maximum
Units
MHz
ps
ps
ps
ps
ps
650
ps
900
ps
52
%
55
%
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium
has been reached under these conditions.
NOTE 1: Refer to Phase Noise Plots.
NOTE 2: Peak-to-Peak jitter after applying system transfer function for the Common Clock Architecture. Maximum limit for PCI Express Gen 1
is 86ps peak-to-peak for a sample size of 106 clock periods. See IDT Application Note PCI Express Reference Clock Requirements and also
the PCI Express Application section of this datasheet which show each individual transfer function and the overall composite transfer function.
NOTE 3: RMS jitter after applying the two evaluation bands to the two transfer functions defined in the Common Clock Architecture and
reporting the worst case results for each evaluation band. Maximum limit for PCI Express Generation 2 is 3.1ps rms for tREFCLK_HF_RMS (High
Band) and 3.0ps RMS for tREFCLK_LF_RMS (Low Band). See IDT Application Note PCI Express Reference Clock Requirements and also the
PCI Express Application section of this datasheet which show each individual transfer function and the overall composite transfer function.
ICS844S0258CK-07 REVISION A DECEMBER 2, 2013
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©2013 Integrated Device Technology, Inc.