IC61LV6432 Datasheet, PDF (6/21 Pages) Integrated Circuit Systems – 64K x 32 Pipelined Sync. SRAM

IC61LV6432
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address
A1 A0
00
01
10
11
1st Burst Address
A1 A0
01
00
11
10
2nd Burst Address
A1 A0
10
11
00
01
3rd Burst Address
A1 A0
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)
0,0
A1’, A0’ = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS^(1,2,3)
Symbol
Parameter
Value
Unit
TBIAS
TSTG
Temperature Under Bias
Storage Temperature
–10 to +85
°C
–55 to +150
°C
PD
Power Dissipation
1.8
W
IOUT
VIN, VOUT
Output Current (per I/O)
Voltage Relative to GND for I/O Pins
100
mA
–0.5 to VCCQ + 0.3
V
VIN
Voltage Relative to GND for for Address and Control Inputs
–0.5 to 5.5
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
3.3V +10%, –5%
3.3V +10%, –5%
VCCQ
2.375 min, 3.465max
2.375 min, 3.465max
6
Integrated Circuit Solution Inc.
SSR005-0A 002/02/2004