IS61NW6432 Datasheet, PDF (8/14 Pages) Integrated Circuit Solution Inc – 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE

IS61NW6432
INTERLEAVED BURST ADDRESS TABLE (MODE=V++3 or No connect)
External Address
A1 A0
00
01
10
11
1st Burst Address
A1 A0
01
00
11
10
2nd Burst Address
A1 A0
10
11
00
01
3rd Burst Addres
A1 A0
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE=GND3)
0,0
A1’, A0’ = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
TBIAS
Temperature Under Bias
TSTG
Storage Temperature
PD
Power Dissipation
IOUT
Output Current (per I/O)
VIN, VOUT Voltage Relative to GND for I/O Pins
VIN
Voltage Relative to GND for
for Address and Control Inputs
Value
Unit
–10 to +85
°C
–55 to +150
°C
1.8
W
100
mA
–0.5 to VCCQ + 0.3 V
–0.5 to 5.5
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage
higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
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Integrated Circuit Solution Inc.
SSR006-0B