IC-GF Datasheet, PDF (9/26 Pages) IC-Haus GmbH – TRANSCEIVER

iC-GF
TRANSCEIVER
Rev C1, Page 9/26
ELECTRICAL CHARACTERISTICS
Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
603 Vt()hys
Hysteresis at IN1/TX, IN2/MOSI, Vt()hys = Vt()hi − Vt()lo
OEN, SCLK, NCS
200 280
mV
604 Ipd()
Pull-Down Current at IN1/TX,
IN2/MOSI
V() > 0.4 V
10
168 µA
605 Ipd()
Pull-Down Current at NCS, SCLK SPI mode, V() > 0.4 V
10
40
µA
606 Ipd(OEN) Pull-Down Current at OEN
V(OEN) > 0.4 V
1
6
µA
607 Vahi()
Input Threshold hi at QCFG1,
QCFG2, INV1
52
64
69 %VCC3
608 Vahi()hys Hysteresis hi at QCFG1, QCFG2,
INV1
3
7 %VCC3
609 Valo()
Input Threshold lo at QCFG1,
QCFG2, INV1
24
29
34 %VCC3
610 Valo()hys Hysteresis lo at QCFG1, QCFG2,
INV1
3
7 %VCC3
611 Voc()
Open Circuit Voltage at QCFG1,
QCFG2, INV1
42 46.5 51 %VCC3
612 Ri()
Internal Resistance at QCFG1, Referenced to VCC3
QCFG2, INV1
Referenced to GND
40
85 190 kΩ
40
85 190 kΩ
613 tsup()
Permissible Spurious Pulse
No activity triggered, DEFAULT mode or SPI
Width at IN1/TX, IN2, INV1/ESPI mode with FCFG(1:0) = 10
2.5
µs
614 ttrig()
Required Pulse Width at IN1/TX, Activity triggered, DEFAULT mode or SPI mode 6
µs
IN2, INV1/ESPI
with FCFG(1:0) = 10
615 tsup()
Permissible Spurious Pulse
No activity triggered, DEFAULT mode or SPI
Width at QCFG1, QCFG2, OEN mode with FCFG(1:0) = 10
5
µs
616 ttrig()
Required Pulse Width at QCFG1, Activity triggered, DEFAULT mode or SPI mode 12
µs
QCFG2, OEN
with FCFG(1:0) = 10
617 tpio
Propagation Delay
IN1 → QP1, QN1
IN2 → QP2, QN2
INV1 = low or high, DEFAULT mode or SPI
2.4
mode with FCFG(1:0) = 10
10
µs
Error Output NOVL/NDIAG, NUVD/MISO
701 Vs()lo
Saturation Voltage lo at NOVL, DEFAULT mode, I() = 1.0 mA
NUVD
0.4
V
702 Vs()lo
Saturation Voltage lo at NDIAG SPI mode, I() = 1.0 mA
0.4
V
703 Isc()lo
Short Circuit Current lo in NOVL, DEFAULT mode, V() = 0.4 V...VCC
NUVD
1.2
25
mA
704 Isc()lo
Short Circuit Current lo in NDIAG SPI mode, V() = 0.4 V...VCC
1.2
25
mA
705 Ilk()
Leakage Current in NOVL, NUVD DEFAULT mode, V() = 0 V...VCC, no error
-10
10
µA
706 Ilk()
Leakage Current in NDIAG
SPI mode, V() = 0 V...VCC, no error
-10
10
µA
707 Vs()hi
Saturation Voltage high at MISO SPI mode, I(MISO) = -2 mA,
Vs(MISO)hi = VCC3 − V(MISO)
0.4
V
708 Vs()lo
Saturation Voltage low at MISO SPI mode, I(MISO) = 2 mA
0.4
V
709 Isc()hi
Short Circuit current hi in MISO SPI mode, V(MISO) = 0...VCC3 − 0.4 V
-40
mA
710 Isc()lo
Short Circuit current lo in MISO SPI mode, V(MISO) = 0.4 V...VCC3
90
mA
711 tr(MISO) Rise Time
SPI mode, Cl(MISO) = 30 pF,
0 → 90%VCC3
22
ns
712 tf(MISO) Fall Time
SPI mode, 100 → 10%VCC3
16
ns
Feedback Channel CFI to CFO/RX
801 Vt1(CFI)hi Input Threshold 1 hi at CFI
VBR < 18 V
59
66
74 %VBR
802 Vt1(CFI)lo Input Threshold 1 lo at CFI
VBR < 18 V
44
50
56 %VBR
803 Vt2(CFI)hi Input Threshold 2 hi at CFI
VBR > 18 V
10.5 11.3 12
V
804 Vt2(CFI)lo Input Threshold 2 lo at CFI
VBR > 18 V
8.3
9
10.5
V
805 Vt()hys Hysteresis at CFI
Vt(CFI)hys = Vt(CFI)hi − Vt(CFI)lo
1
V
806 Ipu(CFI) Pull-Up Current at CFI
DEFAULT mode: CFP = hi,
V(CFI) = 0...VBR − 3 V
SPI mode: POL = 1, ENPUD = 1
-300
-40
µA