IC-GF Datasheet, PDF (10/26 Pages) IC-Haus GmbH – TRANSCEIVER

iC-GF
TRANSCEIVER
Rev C1, Page 10/26
ELECTRICAL CHARACTERISTICS
Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
807 Ipd(CFI) Pull-Down Current at CFI
DEFAULT mode: CFP = lo, V(CFI) = 3 V...VBR 40
SPI mode: POL = 0, ENPUD = 1
300 µA
808 tpcf
Propagation Delay
CFI → CFO/RX
V(CFO/RX) = 10 ↔ 90%
2.4
10
µs
809 Vs()lo
Saturation Voltage lo at CFO/RX Open collector mode, I(CFO/RX) = 1.0 mA
0.4
V
810 Isc()lo
Short Circuit Current lo in
CFO/RX
Open collector mode,
V(CFO/RX) = 0.4 V...VCC
1.2
25
mA
811 Ilk()
Leakage Current at CFO/RX
Open collector mode, V(CFO/RX) = 0 V...VCC, -10
CFO/RX = off
10
µA
812 Vt(CFP)hi Input Threshold Voltage hi at
CFP
2
V
813 Vt(CFP)lo Input Threshold Voltage lo at
CFP
0.8
V
814 Vt(CFP)hys Hysteresis at CFP
815 Ipd(CFP) Pull-Down Current at CFP
Vt(CFP)hys = Vt(CFP)hi − Vt(CFP)lo
V(CFP) = 0.4 V...Vt(CFP)lo
V(CFP) > Vt(CFP)hi
200 280
mV
30
168 µA
10
40
µA
816 tsup(CFI) Permissible Spurious Pulse
Width at CFI
No activity triggered, DEFAULT mode or SPI
mode with FCFI(1:0) = 01
2.5
µs
817 ttrig(CFI) Required Pulse Width at CFI
Activity triggered, DEFAULT mode or SPI mode 6
µs
with FCFI(1:0) = 01
818 tsup(CFP) Permissible Spurious Pulse
Width at CFP
No activity triggered
5
µs
819 ttrig(CFP) Required Pulse Width at CFP Activity triggered
12
µs
820 Ipd(CFI)+ Pull-Down Current at CFI plus V(CFI) = 3 V...VBR, OEN = lo;
20
µA
llk(QPx) leakage current at QPx
DEFAULT mode: CFP = lo
SPI mode: POL = 0, ENPUD = 1
821 Vs(RX)hi Saturation Voltage high at RX
SPI mode, ENOD = 0, I(RX) = -2 mA,
Vs(RX)hi = VCC3 − V(RX)
0.4
V
822 Vs(RX)lo Saturation Voltage low at RX SPI mode, ENOD = 0, I(RX) = 2 mA
0.4
V
823 Isc(RX)hi Short Circuit current hi in RX
SPI mode, ENOD = 0,
V(RX) = 0...VCC3 − 0.4 V
-40
mA
824 Isc(RX)lo Short Circuit current lo in RX SPI mode, ENOD = 0, V(RX) = 0.4 V...VCC3
90
mA
825 tr(RX)
Rise Time at RX
SPI mode, ENOD = 0, CL(RX) = 30 pF,
0 → 90%VCC3
22
ns
826 tf(RX)
Fall Time at RX
SPI mode, ENOD = 0, CL(RX) = 30 pF,
100 → 10%VCC3
22
ns
Step Down Converter VHL, VH
901 VHn
Nominal Voltage at VH
LVH = 22 µH, Ri(LVH) < 1.1 Ω, CVH = 1 µF,
I(VH) = 0...50 mA
6.3 6.7 7.4
V
902 VHnr
Nominal Voltage at VH, LVH re- R = 170 Ω, I(VH) = 0...10 mA
placed by a resistor
6.3
8.4
V
903 Ia(VHL) max. DC Cut-Off Current in VHL
-200
mA
904 Va(VH) Cut-Off Voltage at VH
Va(VH) > VHn
6.5 7.3 8.4
V
906 Vs(VHL)
907 Vf(VHL)
Saturation Voltage at VHL vs.
VBR
Saturation Voltage at VHL vs.
GND
I(VHL) = -50 mA
I(VHL) = -150 mA
Vf(VHL) = V(GND) − V(VHL);
I(VHL) = -50 mA
I(VHL) = -150 mA
0.5 1.1
V
1.5 3.0
V
0.6 1.5
V
1.7 2.9
V
908 Ilk(VHL) Leakage Current at VHL
VHL = lo, V(VHL) = V(VH)
-20
20
µA
909 ηVH
Efficiency of VH switching regula- I(VH) = 50 mA, Ri(LVH) < 1.1 Ω,
70
%
tor
V(VBR) = 12...30 V