IC-HT Datasheet, PDF (7/42 Pages) IC-Haus GmbH – DUAL CW LASER DIODE DRIVER

iC-HT
DUAL CW LASER DIODE DRIVER
preliminary
Rev A1, Page 7/42
ELECTRICAL CHARACTERISTICS
Operating Conditions: VB = 2.8 . . . 8 V (referenced to GND), Tj = -40 . . . 125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
Min.
114 Idc(LDK) LDKx ACC mode current
EC1, EC2, EMC = hi, EACCx = 1,
V(LDKx) = 0.7 V . . . VB - 1.5 V
REFx(9:0) = 0x000, RACCx = 0
60
REFx(9:0) = 0x3FF, RACCx = 0
750
REFx(9:0) = 0x000, RACCx = 1
6
REFx(9:0) = 0x3FF, RACCx = 1
90
Programmable Resistor
201 Rmda
Resistor at MDAx pin
RMDx(7:0) = 0xF0 . . . 0xFF, DISPx = 0
RMDx(7:0) = 0x00 . . . 0x0F, DISPx = 0
350
0.154
202 Tk
203 ∆ R
Temperature coefficient
Percentual resistor increment
∆R
=
R(n+1)−R(n)
R(n)
-1500
1
Typ.
82
905
10
113
500
0.220
-500
3.3
Max.
120
1400
15
160
650
0.286
0
7
Unit
mA
mA
mA
mA
kΩ
kΩ
ppm/K
%
204 Ileak(MDA) MDAx leackage current
DISPx = 1
D/A Converter
301 R(DAC)
302 ∆ V
303 V(DAC)
D/A Converter Resolution
Percentual voltage increments
D/A Converter
∆V
=
V (n+1)−V (n)
V (n)
REFx(9:0) = 0x000 lowest value
REFx(9:0) = 0x3FF highest value
Check Output NCHK
401 Vs()lo
Saturation Voltage lo at NCHK I(NCHK) = 1.0 mA
402 Isc()lo
Short Circuit Current lo at NCHK V(NCHK) = 0.4 . . . 3.3 V
403 Ilk()
Leakage Current at NCHK
NCHK = 1;
V(NCHK) = 0 . . . 5.5 V
Series Regulator Output VDD
501 V(VDD) Regulated output voltage
VB = 3.7 . . . 8 V, I(VDD) = -10 . . . 0 mA
NSTBY = hi
502 V(VB,VDD) Voltage Drop between VB and VDD unregulated, I(VDD) = -10 . . . 0 mA
VDD
NSTBY = hi
503 C(VOUT) Capacitor at VDD
Ri(C) < 1 Ω
504 Tvdd
Settling time VDD
NSTBY lo → hi, no load at VDD,
V(VDD) 0 to 90 %
CVDD = 1 µF
Digital inputs
601 Vt()hi
Input Threshold Voltage hi at
EMC, NCS/A1, MISO/SDA,
MOSI/A0, SCLK/SCL, INS/WKR,
NSTBY, EC1, EC2
602 Vt()lo
Input Threshold Voltage lo at
EMC, NCS/A1, MISO/SDA,
MOSI/A0, SCLK/SCL, INS/WKR,
NSTBY, EC1, EC2
603 Vt()hys
Hysteresis at EMC, NCS/A1,
MISO/SDA, MOSI/A0,
SCLK/SCL, INS/WKR, NSTBY,
EC1, EC2
Vt()hys = Vt()hi - Vt()lo
604 Ipd()
Pull-Down Current at MOSI/A0, V() = 0.4 V . . . VDD
EC1, EC2
605 Ipd()
Pull-Down Current at NSTBY V() = 0.4 V . . . VB
606 Rpu()
Pull-Up Resistor at SCLK/SCL,
NCS/A1
607 Rpu()
Pull-Up Resistor at MISO/SDA EMC = hi, INS/WKR = lo
EMC = hi, INS/WKR = hi
608 Er()
Safe enable threshold voltage at Rising
EMC, INS/WKR
Falling
609 Voc()
Open Circuit Voltage at EMC,
INS/WKR
-1
1
µA
10
bit
0.05 0.235 1
%
0.09 0.10 0.12
V
1.00 1.10 1.25
V
0.4
V
9
33
mA
-10
10
µA
3
3.5
V
100 400 mV
1
3.3
µF
1
ms
2
V
0.7
V
100
mV
1
50
µA
1
50
µA
80 150 260 kΩ
8
20
50
kΩ
53 100 174 kΩ
52
54
56 % VDD
30
32
34 % VDD
39
41
43 % VDD