HY5PS561621BLFPE3I Datasheet, PDF (8/34 Pages) Hynix Semiconductor – 256Mb DDR2 SDRAM

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1HY5PS561621B(L)FP-xI
2. Maximum DC Ratings
2.1 Absolute Maximum DC Ratings
Symbol
Parameter
VDD
Voltage on VDD pin relative to Vss
VDDQ _{Voltage on VDDQ pin relative to Vss}
VDDL
Voltage on VDDL pin relative to Vss
V_IN, V_{OUT Voltage on any pin relative to Vss}
T_STG
Storage Temperature
Rating
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
Units
V
V
V
V
°C
Notes
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1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. Storage Temperature is the case surface temperature on the denter/top side of the DRAM. For the measurement conditions.
Please refer to JESD51-2 standard.
2.2 Operating Temperature Condition
Symbol
tOPER
Parameter
Operating Temperature
Rating
-40 to 85
Units
°C
Notes
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1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51-2 standard.
Rev. 0.2 / Apr. 2008
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