HY5PS561621BLFPE3I Datasheet, PDF (7/34 Pages) Hynix Semiconductor – 256Mb DDR2 SDRAM

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1HY5PS561621B(L)FP-xI
PIN
DQS, (DQS)
(UDQS),(UDQS)
(LDQS),(LDQS)
(RDQS),(RDQS)
TYPE
Input/
Output
DESCRIPTION
Data Strobe : Output with read data, input with write data. Edge aligned with read data, cen-
tered in write data. For the x16, LDQS correspond to the data on DQ0~DQ7; UDQS corresponds
to the data on DQ8~DQ15. For the x8, an RDQS option using DM pin can be enabled via the
EMRS(1) to simplify read timing. The data strobes DQS, LDQS, UDQS, and RDQS may be used in
single ended mode or paired with optional complementary signals DQS, LDQS,UDQS and RDQS
to provide differential pair signaling to the system during both reads and wirtes. An EMRS(1)
control bit enables or disables all complementary data strobe signals.
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of
EMRS(1)
x16 LDQS/LDQS and UDQS/UDQS
"single-ended DQS signals" refers to any of the following with A10 = 1 of
EMRS(1)
x16 LDQS and UDQS
NC
VDDQ
VSSQ
VDDL
VSSDL
VDD
VSS
VREF
Supply
Supply
Supply
Supply
Supply
Supply
Supply
No Connect : No internal electrical connection is present.
DQ Power Supply: 1.8V +/- 0.1V
DQ Ground
DLL Power Supply : 1.8V +/- 0.1V
DLL Ground
Power Supply : 1.8V +/- 0.1V
Ground
Reference voltage for inputs for SSTL interface.
Rev. 0.2 / Apr. 2008
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