GM71V18163C Datasheet, PDF (8/11 Pages) Hynix Semiconductor – 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM

EDO Page Mode Cycle
Symbol
Parameter
tHPC
tRASP
tACP
tRHCP
tDOH
tCOL
tCOP
tRCHP
EDO Page Mode Cycle Time
EDO Page Mode RAS Pulse Width
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
Output data Hold Time from CAS low
CAS Hold Time referred OE
CAS to OE Setup Time
Read command Hold Time
from CAS Precharge
GM71V18163C
GM71VS18163CL
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
Note
20 - 25 - 30 -
ns
25
- 100,000 - 100,000 - 100,000 ns
16
- 30 - 35 - 40 ns 9,17,22
30 - 35 - 40 -
ns
3- 3- 3
ns
9
8 - 10 - 13
ns
5- 5- 5
ns
30 - 35 - 40
ns
EDO Page Mode Read-Modify-Write Cycle
Symbol
Parameter
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
tHPRWC EDO Page Mode Read-Modify-Write
Cycle Time
tCPW WE Delay Time from CAS Precharge
57 - 68 - 79 -
ns
45 - 54 - 62 -
ns
Note
14,22
Refresh
Symbol
Parameter
tREF
Refresh period
tREF
Refresh period (L -Series)
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
Note
-
16 ^- 16 - 16
1024
ms _cycles
- 128 - 128 - 128
1024
ms _cycles
Rev 0.1 / Apr’01