GM71V18163C Datasheet, PDF (7/11 Pages) Hynix Semiconductor – 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM

Write Cycle
Symbol
Parameter
tWCS ^{Write Command Setup Time}
tWCH ^{Write Command Hold Time}
tWP
Write Command Pulse Width
tRWL Write Command to RAS Lead Time
tCWL Write Command to CAS Lead Time
tDS
Data-in Setup Time
tD
Data-in Hold Time
H
GM71V18163C
GM71VS18163CL
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
0-
0-
0-
ns
8 - 10 - 13 -
ns
8 - 10 - 10 -
ns
8 - 10 - 13 -
ns
8 - 10 - 13 -
ns
0-
0 - 0-
ns
8 - 10 - 13 -
ns
Note
14,21
21
23
15,23
15,23
Read- Modify-Write Cycle
Symbol
Parameter
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
OE Hold Time from WE
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
111 - 136 - 161 -
ns
67 - 79 - 92 -
ns
30 - 34 - 40 -
ns
42 - 49 - 57 -
ns
13 - 15 - 18 -
ns
Note
14
14
14
Refresh Cycle
Symbol
Parameter
tCSR
CAS Setup Time
(CAS-before-RAS Refresh Cycle)
tCHR CAS Hold Time
(CAS-before-RAS Refresh Cycle)
tRPC RAS Precharge to CAS Hold Time
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
Note
5 - 5 - 5 - ns
21
8 - 10 - 10 - ns
22
5 - 5 - 5 - ns
21
Rev 0.1 / Apr’01