GM71V18163C Datasheet, PDF (6/11 Pages) Hynix Semiconductor – 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM

Read Cycle
Symbol
Parameter
tRAC
tCAC
tAA
tOAC
tRCS
tRCH
tRRH
tRAL
tCAL
tCLZ
tOH
tOHO
tOFF
tOEZ
tCDD
tRCHR
tOHR
tOFR
tWEZ
tWDD
Access Time from RAS
Access Time from CAS
Access Time from Address
Access Time from OE
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Column Address to CAS Lead Time
CAS to Output in Low-Z
Output Data Hold Time
Output Data Hold Time from OE
Output Buffer Turn-off Time
Output Buffer Turn-off Time to OE
CAS to DIN Delay Time
Read Command Hold Time from RAS
Output Data hold Time from RAS
Output Buffer turn off to RAS
Output Buffer turn off to WE
WE to DIN Delay Time
tRDD RAS to DIN Delay Time
GM71V18163C
GM71VS18163CL
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
- 50 - 60 - 70 ns
- 13 - 15 - 18 ns
- 25 - 30 - 35 ns
- 13 - 15 - 18 ns
0- 0- 0-
ns
0- 0- 0-
ns
5- 5- 5-
ns
25 - 30 - 35 -
ns
15 - 18 - 23 -
ns
0- 0- 0-
ns
3- 3- 3-
ns
3- 3- 3-
ns
- 13 - 15 - 15
ns
- 13 - 15 - 15
ns
13 - 15 - 18 -
ns
50 - 60 - 70 -
ns
3 - 3- 3-
ns
- 13 - 15 - 15
ns
- ₁₃ - ₁₅ - ₁₅
ns
13 - 15 - 18 -
ns
Note
8,9
9,10,17
9,11,17
9
21
12,22
12
27
13,27
13
5
27
27
13 - 15 - 18 -
ns
Rev 0.1 / Apr’01