GM71V18163C Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM

GM71V18163C
GM71VS18163CL
DC Electrical Characteristics (VCC = 3.3V+/-0.3V, Vss = 0V, TA = 0 ~ 70C)
Symbol
VOH
VOL
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
Parameter
Min Max Unit Note
Output Level
Output "H" Level Voltage (IOUT = -2mA)
Output Level
Output "L" Level Voltage (IOUT = 2mA)
Operating Current
Average Power Supply Operating Current
(RAS, UCAS or LCAS Cycling: tRC = tRC min)
2.4 VCC
V
0
50ns -
60ns -
70ns -
0.4 V
190
170 mA 1, 2
150
Standby Current (TTL)
Power Supply Standby Current
(RAS, UCAS, LCAS = VIH, DOUT = High-Z)
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
-
2
mA
50ns - 190
60ns - 170 _{mA 2}
70ns - 150
EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
(tHPC = tHPC min)
Standby Current (CMOS)
Power Supply Standby Current
(RAS, UCAS or LCAS >= VCC - 0.2V, DOUT = High-Z)
CAS-before-RAS Refresh Current
(tRC = tRC min)
50ns -
60ns -
70ns ^-
-
-
50ns -
60ns -
70ns -
185
165 ^{mA 1, 3}
145
1 mA
150 uA 5
190
170 mA
150
Battery Back Up Operating Current(Standby with CBR Ref.)
(CBR refresh, tRC=125us, tRAS<=0.3us,
DOUT=High-Z, CMOS interface)
- 400 uA 4,5
ICC8
Standby Current RAS = VIH
UCAS, LCAS = VIL
DOUT = Enable
ICC9
Self-Refresh Mode Current
(RAS, UCAS or LCAS<=0.2V, DOUT=High-Z)
IL(I)
Input Leakage Current
Any Input (0V<=VIN<= 4.6V)
IL(O)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 4.6V)
Note: 1. ICC depends on output load condition when the device is selected.
ICC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while LCAS and UCAS = VIH.
4. UCAS = L (<=0.2) and LCAS = L (<=0.2) while RAS = L (<=0.2).
5. L-version.
-
5 mA 1
- 250 uA ₅
-10 10 uA
-10 10 uA
Rev 0.1 / Apr’01