HYMP512R72L Datasheet, PDF (7/18 Pages) Hynix Semiconductor – DDR2 SDRAM Registered DIMM

ABSOLUTE MAXIMUM RATINGS
HYMP512R72(L)4
Parameter
Operating temperature(ambient)
DRAM Component Case Temperature Range
Operating Humidity(relative)
Storage Temperature
Storage Humidity(without condensation)
Barometric Pressure(operating & storage)
Symbol
T_OPR
TCASE
H_OPR
TSTG
H_STG
P_BAR
Value
0 ~ +55
0 ~+95
10 to 90
-50 ~ +100
5 to 95
105 to 69
Unit
o_C
o_C
%
o_C
o_C
K Pascal
Note
1
2
1
1
1
1,3
Note :
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating conditions for extended periods
may affect reliablility.
2. If the DRAM case temperature is Above 85^oC, the Auto-Refresh command interval has to be reduced to tREFI=3.9㎲.
For Measurement conditions of T_CASE, please refer to the JEDEC document JESD51-2.
3. Up to 9850 ft.
Operating Condtions(AC&DC)
DC OPERATING CONDITIONS (SSTL_1.8)
Parameter
Symbol
Min
VDD
1.7
Power Supply Voltage
VDDQ
1.7
Input Reference Voltage
VREF
0.49 x VDDQ
EEPROM Supply Voltage
VDDSPD
1.7
Termination Voltage
VTT
VREF-0.04
Note :
1.V_DDQ must be less than or equal to V_DD.
2. Peak to peak ac noise on V_REF may not exeed +/-2% V_REF(dc)
3. VTT of transmitting device must track VREF of receiving device.
Max
1.9
1.9
0.51 x VDDQ
3.6
VREF+0.04
Unit
Note
V
V
1
V
2
V
V
3
Input DC Logic Level
Parameter
Input High Voltage
Input Low Voltage
Symbol
VIH(DC)
VIL(DC)
Min
VREF + 0.125
-0.30
Max
VDDQ + 0.3
VREF - 0.125
Unit
Note
V
V
Rev. 0.2 / July 2004
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