HYMP512R72L Datasheet, PDF (11/18 Pages) Hynix Semiconductor – DDR2 SDRAM Registered DIMM

PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz )
Parameter
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Pin
CK0, /CK0
CKE, ODT
/CS
Address, /RAS, /CAS, /WE
DQ,DM,DQS, /DQS
Symbol
CCK
CI1
CI2
CI3
CIO
Note :
1. Pins not under test are tied to GND.
2. These value are guaranteed by design and tested on a sample basis only.
HYMP512R72(L)4
Min
Max
Unit
9
13
pF
10
15
pF
10
15
pF
10
15
pF
10
15
pF
IDD Specifications
HYMP512R72(L)4
PC2 3200
Parameter
Symbol
max.
Operating one bank active-precharge
current
IDD0
2090
Operating one bank active-read-precharge
current
IDD1
2270
Precharge power-down current
IDD2P
704
Precharge quiet standby current
IDD2Q
1190
Precharge standby current
IDD2N
1280
Active power-down current
IDD3P(F)
920
IDD3P(S)
704
Active Standby Current
IDD3N
1550
Operating burst read current
IDD4R
2990
Operating Current
IDD4W
2990
Burst auto refresh current
IDD5B
1790
Self Refresh Current
IDD6
440
IDD6(L)
404
Operating bank interleave read current
IDD7
4250
PC2 4300
max.
2270
2450
722
1280
1370
1010
722
1730
3170
3170
1790
440
404
4610
PC2 5300
max.
Unit Note
2450
mA
2630
mA
740
mA
1460
mA
1550
mA
1100
mA
740
mA
1910
mA
3440
mA
3440
mA
1790
mA
440
mA
404
mA
4970
mA
Rev. 0.2 / July 2004
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