HY5V66EF6 Datasheet, PDF (6/12 Pages) Hynix Semiconductor – 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

11Preliminary
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY5V66E(L)F6(P) Series
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD supply relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature ^. Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
DC OPERATING CONDITION (TA= 0 to 70^oC)
Parameter
Symbol
Min
Typ
Power Supply Voltage
VDD, VDDQ
3.0
3.3
Input High Voltage
VIH
2.0
3.0
Input Low Voltage
VIL
-0.3
-
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 ^. 10
Max
3.6
VDDQ+0.3
0.8
Unit
V
V
V
Unit
o_C
o_C
V
V
mA
W
o_C . _Sec
Note
1
1, 2
1, 3
Note: 1. All voltages are referenced to VSS = 0V
2. VIH (max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. VIL (min) is acceptable -2.0V AC pulse width with <=3ns of duration.
AC OPERATING TEST CONDITION (TA= 0 to 70 ^oC, VDD=3.3±0.3V, VSS=0V)
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4 / 0.4
1.4
1
1.4
30
Unit
V
V
ns
V
pF
Note
1
Note 1.
Output
Vtt=1.4V
RT=500 Ω
Output
30pF
Z0 = 50Ω
Vtt=1.4V
RT=50 Ω
30pF
DC Output Load Circuit
AC Output Load Circuit
Rev. 0.2 / June. 2005
6