HY5V66EF6 Datasheet, PDF (5/12 Pages) Hynix Semiconductor – 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

11Preliminary
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY5V66E(L)F6(P) Series
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1 BA0 A11 A10
0
0
0
0
A9
OP Code
A8 A7 A6 A5 A4 A3 A2 A1 A0
0
0
CAS Latency
BT
Burst Length
OP Code
A9
0
1
Write Mode
Burst Read and Burst Write
Burst Read and Single Write
Burst Type
A3
Burst Type
0
Sequential
1
Interleave
CAS Latency
A6 A5 A4
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
CAS Latency
Reserved
1
2
3
Reserved
Reserved
Reserved
Reserved
Burst Length
A2 A1 A0
00 0
00 1
01 0
01 1
10 0
10 1
1 10
1 11
Burst Length
A3 = 0
A3=1
1
1
2
2
4
4
8
8
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Full Page
Reserved
Rev. 0.2 / June. 2005
5