HY5V66EF6 Datasheet, PDF (1/12 Pages) Hynix Semiconductor – 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No.
History
0.01
Initial Draft
1. Editorial chage
0.80Typ --> 0.45 +/-0.05 (page12, Ball Dimension)
Before dimension :
Draft Date
Dec. 2004
Remark
Preliminary
0.80 Typ.
0.2
After dimension :
0.65 Typ.
June. 2005 Preliminary
0.450 +/- 0.05
0.65 Typ.
2. Added
Speed Product(100MHz CL2) (see to Page 02)
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.2 / June. 2005
1