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HY62UF16806B Datasheet, PDF (5/11 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM
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HY62UF16806B
AC CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0°C to 70°C/ -40°C to 85°C unless otherwise specified
# Symbol Parameter
-55
-70
-85
Min. Max. Min. Max. Min Max. Unit
READ CYCLE
1 tRC
Read Cycle Time
55
-
70
-
85
- ns
2 tAA
Address Access Time
-
55
-
70
-
85 ns
3 tACS
Chip Select Access Time
-
55
-
70
-
85 ns
4 tOE
Output Enable to Output Valid
-
30
-
35
-
40 ns
5 tBA
/LB, /UB Access Time
-
55
-
70
-
85 ns
6 tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
- ns
7 tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
- ns
8 tBLZ
/LB, /UB Enable to Output in Low Z
10
-
10
-
10
- ns
9 tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
30 ns
10 tOHZ Out Disable to Output in High Z
0
30
0
30
0
30 ns
11 tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
0
30 ns
12 tOH
Output Hold from Address Change
10
-
10
-
10
- ns
WRITE CYCLE
13 tWC
Write Cycle Time
55
-
70
-
85
- ns
14 tCW
Chip Selection to End of Write
50
-
60
-
70
- ns
15 tAW
Address Valid to End of Write
50
-
60
-
70
- ns
16 tBW
/LB, /UB Valid to End of Write
50
-
60
-
70
- ns
17 tAS
Address Set-up Time
0
-
0
-
0
- ns
18 tWP
Write Pulse Width
45
-
50
-
60
- ns
19 tWR
Write Recovery Time
0
-
0
-
0
- ns
20 tWHZ Write to Output in High Z
0
20
0
20
0
25 ns
21 tDW
Data to Write Time Overlap
25
-
30
-
35
- ns
22 tDH
Data Hold from Write Time
0
-
0
-
0
- ns
23 tOW
Output Active from End of Write
5
-
5
-
5
- ns
AC TEST CONDITIONS
TA = 0°C to 70°C / -40°C to 85°C, unless otherwise specified
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Other
Value
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
VTM = 2.8V
D
OUT
1029 Ohm
CL(1)
1728 Ohm
Note
1. Including jig and scope capacitance
Rev.01/Mar. 2002
4
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