HY62UF16806B Datasheet, PDF (3/11 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

ORDERING INFORMATION
Part No.
Speed
HY62UF16806B-DFC 55/70/85
HY62UF16806B-DFI
55/70/85
Note 1. C : Commercial, I : Industrial
Power
LL-part
LL-part
Package
FBGA
FBGA
Temp.
C
I
HY62UF16806B
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
VIN, VOUT
Vcc
TA
TSTG
PD
TSOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.3 to Vcc+0.3
-0.3 to 4.6
0 to 70
-40 to 85
-55 to 150
1.0
260 • 10
Unit
V
V
°C
°C
°C
W
°C • sec
Remark
HY62UF16806B-C
HY62UF16806B-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 CS2 /WE /OE /LB /UB Mode
I/O Pin
I/O1~I/O8 I/O9~I/O16
H
X
X
X XX
Hi-Z
Hi-Z
X
L
X
X XX
Deselected
Hi-Z
Hi-Z
X
X
X
X HH
Hi-Z
Hi-Z
L
L
H
H
H
H
H
H
L
X
X
L
Output Disabled
Hi-Z
Hi-Z
Hi-Z
Hi-Z
L
H
H
L
LH
DOUT
Hi-Z
HL
Read
Hi-Z
DOUT
LL
DOUT
DOUT
L
H
L
X LH
DIN
Hi-Z
HL
Write
Hi-Z
DIN
LL
DIN
DIN
Note:
1. H=VIH, L=VIL, X=don't care(VIH or VIL)
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O1 -I/O8.
When /UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.
Power
Standby
Active
Active
Active
Rev.01/Mar. 2002
2