HY62UF16806B Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

HY62UF16806B
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min. Typ. Max. Unit
2.7 3.0
3.3
V
0
0
0
V
2.2
- Vcc+0.3 V
-0.3(1) -
0.6
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0°C to 70°C/ -40°C to 85°C
Sym
Parameter
Test Condition
Min Typ^1. Max Unit
ILI Input Leakage Current
Vss < VIN < Vcc
-1 -
1
uA
Vss < VOUT < Vcc,
-1 -
1
uA
ILO Output Leakage Current
/CS1 = VIH or CS2=VIL or
/OE = VIH or /WE = VIL or
/UB = VIH , /LB = VIH
Icc Operating Power Supply Current
/CS1 = VIL, CS2=VIH,
VIN = VIH or VIL, II/O = 0mA
3 mA
/CS1 = VIL, CS2 = VIH,
20 mA
VIN = VIH or VIL, Cycle Time = Min,
100% Duty, II/O = 0mA
ICC1 Average Operating Current
/CS1 < 0.2V, CS2 > Vcc-0.2V,
2 mA
VIN < 0.2V or VIN > Vcc-0.2V,
Cycle Time = 1us,
100% Duty, II/O = 0mA
/CS1 = VIH or CS2 = VIL or
0.3 mA
ISB Standby Current (TTL Input)
/UB, /LB = VIH
VIN = VIH or VIL
/CS1 > Vcc - 0.2V or
CS2 < Vss + 0.2V or
ISB1 Standby Current (CMOS Input)
/UB, /LB > Vcc - 0.2V
LL
1
15 uA
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
VOL Output Low
IOL = 2.1mA
-
-
0.4 V
VOH Output High
IOH = -1.0mA
2.4 -
-
V
Note :
1.Typical values are at Vcc = 3.0V, TA = 25°C
2. Typical values are not 100% Tested
CAPACITANCE
(Temp = 25°C, f = 1.0MHz)
Symbol
Parameter
CIN
Input Capacitance (Add, /CS1,CS2,/LB,/UB, /WE, /OE)
COUT
Output Capacitance (I/O)
Note : These parameters are sampled and not 100% tested
Condition
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Rev.01/Mar. 2002
3