HY62UF16806B Datasheet, PDF (1/11 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No History
00
Initial Release
01
DC Para Change
Icc
4mA à 3mA
Icc1(Min) 40mA à 20mA
Icc1(1us) 8mA à 2mA
Isb
0.1mA à 0.3mA
Isb1
25uA à 15uA
Iccdr
12uA à 6uA
HY62UF16806B Series
512Kx16bit full CMOS SRAM
Draft Date
Remark
May.29.2001 Preliminary
Mar.20.2002
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.01 / Mar. 2002
Hynix Semiconductor