HY5S7B2ALFP-6 Datasheet, PDF (45/53 Pages) Hynix Semiconductor – 512M (16Mx32bit) Mobile SDRAM

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512Mbit (16Mx32bit) Mobile SDR Memory
HY5S7B2ALF(P) Series
CLK
tCKS
CKE
CS
RAS
CAS
WE
VDDR
BA0, BA1
AP
Hi-Z
DQ
DQM
tCKS
tCKS
tCKS
Power down Exit Time
Ra
Ca
Ra
Qa0 Qa1 Qa2
Precharge
Power down
Entry
Row Active
Read
Precharge
Power down
Exit
Active
Power down
Entry
Active
Power down
Exit
Note : CKE should be set high at least 1CLK + tCKS prior to Row active command.
Precharge
Don’t care
Rev 1.2 / Nov. 2008
45