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| HY5S7B2ALFP-6 Datasheet, PDF (11/53 Pages) Hynix Semiconductor – 512M (16Mx32bit) Mobile SDRAM | |||
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512Mbit (16Mx32bit) Mobile SDR Memory
HY5S7B2ALF(P) Series
DC CHARACTERISTICS III - Low Power (IDD6)
Temp.
( oC)
45
85
4 Banks
250
500
Memory Array
2 Banks
220
400
1 Bank
205
350
Unit
uA
uA
1. VDD / VDDQ = 1.8V
2. Related numerical values in this 45oC are examples for reference sample value only.
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will automatically
adjust the interval of self-refresh operation according to ambient temperature variations.
Rev 1.2 / Nov. 2008
11
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