HY5S7B2ALFP-6 Datasheet, PDF (35/53 Pages) Hynix Semiconductor – 512M (16Mx32bit) Mobile SDRAM

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512Mbit (16Mx32bit) Mobile SDR Memory
HY5S7B2ALF(P) Series
WRITE to WRITE
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case,
a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of
the clock following the previous WRITE command. The first data-in element from the new burst is applied after either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The
new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of
desired data-in element.
CLK
Command
Address
DQ
WRITE
WRITE
BA, Col
b
BA, Col
n
DIb0 DIb1 DIb2 DIb3 DIn0 DIn1 DIn2 DIn3
DM
CL = 2 or 3
Concatenated Write Bursts
Don't Care
CLK
Command
Address
DQ
DM
W RITE
WRITE
WRITE
W RITE
WRITE
NOP
BA, Col
b
BA, Col
x
BA, Col
n
BA, Col
a
BA, Col
g
DIb DIb'
DIx DIx’ ^DIn DIn’
DIa DIa’ DIg DIg’
Random Write Cycles
CL = 2 or 3
Don't Care
Rev 1.2 / Nov. 2008
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