HY62UF16101C Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 64Kx16bit full CMOS SRAM

HY62UF16101C Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Typ.
Max.
Unit
Vcc
Supply Voltage
2.7
3.0
3.3
V
Vss
Ground
0
0
0
V
VIH
Input High Voltage
2.2
-
Vcc+0.3
V
VIL
Input Low Voltage -0.3(1)
-
0.6
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
2. Undershoots are sampled and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0°C to 70°C / -40°C to 85°C (I)
Sym
Parameter
Test Condition
ILI Input Leakage Current
Vss < VIN < Vcc
ILO Output Leakage Current
Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL,
/UB = /LB = VIH
Icc Operating Power Supply
/CS = VIL, VIN = VIH or VIL,
Current
II/O = 0mA
ICC1 Average Operating Current
/CS < 0.2V, 1us Cycle
Time,100% Duty, II/O = 0mA,
VIN < 0.2V
/CS = VIL, VIN = VIH or VIL
Cycle Time = Min. 100% Duty
II/O = 0mA
ISB TTL Standby Current
/CS = VIH or
(TTL Input)
/UB = /LB = VIH, VIN = VIH or VIL
ISB1 Standby Current
/CS > Vcc - 0.2V or
SL
(CMOS Input)
/UB = /LB > Vcc - 0.2V,
VIN > Vcc - 0.2V or
LL
VIN < Vss + 0.2V
VOL Output Low Voltage
IOL = 2.1mA
VOH Output High Voltage
IOH = -1.0mA
Min. Typ. Max. Unit
-1
-
1
uA
-1
-
1
uA
-
-
3 mA
-
-
5 mA
-
-
45 mA
-
-
0.5 mA
-
-
1
uA
0.5
5
uA
-
-
0.4 V
2.4
-
-
V
Note : 1.Typical values are at Vcc = 3.0V, TA = 25°C
2.Typical values are sampled and not 100% tested.
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
CIN
Input Capacitance(Add, /CS, /UB, /LB, /WE, /OE)
COUT
Output Capacitance(I/O)
Condition
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.04 /Dec. 00
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