HY62UF16101C Datasheet, PDF (2/10 Pages) Hynix Semiconductor – 64Kx16bit full CMOS SRAM

HY62UF16101C Series
DESCRIPTION
The HY62UF16101C is a high speed, super low
power and 1M bit full CMOS SRAM organized as
65,536 words by 16bit. The HY62UF16101C uses
high performance full CMOS process technology
and designed for high speed low power circuit
technology. It is particularly well suited for used in
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 1.2V.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup(LL/SL-part)
-. 1.2V(min) data retention
• Standard pin configuration
-. 48 - FBGA
Product
Voltage
Speed
No.
(V)
(ns)
HY62UF16101C
2.7~3.3 55/70/85/100
HY62UF16101C-I 2.7~3.3 55/70/85/100
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
3
Standby Current(uA)
LL
SL
5
1
5
1
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
BLOCK DIAGRAM
/LB /OE A0 A1 A2 NC
IO9 /UB A3 A4 /CS IO1
IO10 IO11 A5 A6 IO2 IO3
Vss IO12 NC A7 IO4 Vcc
Vcc IO13 NC NC IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC A12 A13 /WE IO8
NC A8 A9 A10 A11 NC
48-FBGA(Top View)
A0
ROW
DECODER
I/O1
MEMORY ARRAY
128K x 16
A15
I/O16
/CS
/OE
/LB
/UB
/WE
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Low Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A15
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(2.7V~3.3V)
Ground
No Connection
Rev.04 /Dec. 00
2