HY62UF16101C Datasheet, PDF (3/10 Pages) Hynix Semiconductor – 64Kx16bit full CMOS SRAM

HY62UF16101C Series
ORDERING INFORMATION
Part No.
HY62UF16101CLLF
HY62UF16101CLLF-I
HY62UF16101CSLF
HY62UF16101CSLF-I
Speed
55/70/85/100
55/70/85/100
55/70/85/100
55/70/85/100
Note 1 Blank : Commercial, I : Industrial
Power
LL-part
LL-part
SL-part
SL-part
Temp.
I
I
Package
FBGA
FBGA
FBGA
FBGA
ABSOLUTE MAXIMUM RATING (1)
Symbol
VIN, VOUT
Vcc
TA
TSTG
PD
TSOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Lead Soldering Temperature & Time
Rating
-0.2 to 3.6
-0.2 to 4.6
0 to 70
-40 to 85
-55 to 150
1.0
260 10
Unit
V
V
°C
°C
°C
W
°C sec
Remark
HY62UF16101C
HY62UF16101C-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS /WE
H
X
X
X
L
H
L
H
L
H
L
L
/OE /LB /UB
Mode
X XX
Deselected
X HH
Deselected
H L X Output Disabled
H X L Output Disabled
L
LH
HL
Read
LL
X LH
HL
Write
LL
I/O
I/O1~I/O8 I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
DOUT
Hi-Z
Hi-Z
DOUT
DOUT
DOUT
DIN
Hi-Z
Hi-Z
DIN
DIN
DIN
Note:
1. H=VIH, L=VIL, X=don't care(VIH or VIL)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When /UB is LOW, data is written or read to the Upper byte, I/O 9 -I/O 16.
Power
Stand by
Stand by
Active
Active
Active
Active
Rev.04 /Dec. 00
2