HY5DU283222AQP Datasheet, PDF (35/51 Pages) Hynix Semiconductor – 128M(4Mx32) GDDR SDRAM

HY5DU283222AQP
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Operating Current
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non Power Down Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down Mode
Burst Mode Operating
Current
Auto Refresh Current
Self Refresh Current
ICC1
Burst length=4, One bank active
tRC ≥ tRC(min), IOL=0mA
ICC2P CKE ≤ VIL(max), tCK = min
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCK = min, Input signals are changed
one time during 2clks
ICC3P CKE ≤ VIL(max), tCK = min
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCK = min, Input signals are changed
one time during 2clks
ICC4
tCK ≥ tCK(min), IOL=0mA
All banks active
ICC5
tRC ≥ tRFC(min),
All banks active
ICC6 CKE ≤ 0.2V
Speed
33
36
4
Unit Note
5
240
210 mA 1
30
20 mA
90
80 mA
35
25 mA
130
100 mA
450
270
3
370 mA 1
mA 1,2
mA
Note :
1. ICC1, ICC4 and ICC5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Rev. 0.1 / Jan. 2005
35