HY29F800 Datasheet, PDF (35/40 Pages) Hynix Semiconductor – 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory

AC CHARACTERISTICS
HY29F800
Addresses
WE#
OE#
CE#
Data
RY/BY#
RESET#
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
VA
t_WC
t_AS
t_AH
t_GHEL
t_{W H}
t_WS
t_CP
t_CPH
t_WHWH1 or t_WHWH2 or t_WHWH3
t_DS
t_DH
t_BUSY
0xA0 for Program
0x55 for Erase
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
Status
t_RH
D _OUT
Notes:
1. PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write
Operation Status section), D_OUT = array data read at VA.
2. Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
3. Word mode addressing shown.
4. RESET# shown only to illustrate t_RH measurement references. It cannot occur as shown during a valid command
sequence.
Figure 25. Alternate CE# Controlled Write Operation Timings
Rev. 4.2/May 01
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