HY29F800 Datasheet, PDF (21/40 Pages) Hynix Semiconductor – 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory

DC CHARACTERISTICS
TTL/NMOS Compatible
Par amet er
Des c r ip t io n
Test Setup
Min
I_LI
Input Load Current
I_LIT
Input Load Current
A[9], OE#, RESET#
V_IN = V_SS to V_CC,
V_CC = V_CC Max
V_CC = V_CC Max; A[9] =
OE# = RESET# = 12.5 V
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC,
V_CC = V_CC Max
CE# = V_IL, OE# = V_IH,
f = 5MHz, Byte Mode
I_CC1
V_CC Active Read Current ^{1, 2}
CE# = V_IL, OE# = V_IH,
f = 5MHz, Word Mode
I_CC2
V_CC Active Write Current ^{2, 3, 4} CE# = V_IL, OE# = V_IH
I_CC3
V_CC CE# Controlled
TTL Standby Current ²
OE# = CE# = RESET#
= V_IH
I_CC4
V_CC RESET# Controlled
TTL Standby Current ²
RESET# = V_IL
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_ID
Voltage for Electronic ID and
Temporary Sector Unprotect
V_CC = 5.0V
-0.5
2.0
11.5
V_OL
Output Low Voltage
V_CC = V_CC Min,
I_OL = 5.8 mA
V_OH Output High Voltage
V_CC = V_CC Min,
I_OH = -2.5 mA
2.4
V_LKO Low V_CC Lockout Voltage⁴
3.2
Notes:
1. The I_CC current is listed is typically less than 2 mA/MHz with OE# at V_IH.
2. Maximum I_CC specifications are tested with V_CC = V_CC Max.
3. I active while the Automatic Erase or Automatic Program algorithm is in progress.
CC
4. Not 100% tested.
HY29F800
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
19
40
mA
19
50
mA
36
60
mA
0.4
1.0
mA
0.4
1.0
mA
0.8
V
V_CC + 0.5 V
12.5
V
0.45
V
V
4.2
V
Rev. 4.2/May 01
21