HY29F800 Datasheet, PDF (22/40 Pages) Hynix Semiconductor – 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory

HY29F800
DC CHARACTERISTICS
CMOS Compatible
Par amet er
Des c r ip t io n
Test Setup
Min
Typ
Max Unit
I_LI
Input Load Current
I_LIT
Input Load Current
A[9], OE#, RESET#
V_IN = V_SS to V_CC,
V_CC = V_CC Max
V_CC = V_CC Max, A[9] =
OE# = RESET# =12.5 V
±1.0
µA
35
µA
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC,
V_CC = V_CC Max
CE# = V_IL, OE# = V_IH,
f = 5MHz, Byte Mode
I_CC1
V_CC Active Read Current ^{1, 2} _{CE# = VIL, OE# = VIH,}
f = 5MHz, Word Mode
±1.0
µA
20
40
mA
28
50
mA
I_CC2
V_CC Active Write Current ^{2, 3, 4} CE# = V_IL, OE# = V_IH
30
50
mA
I_CC3
V_CC CE# Controlled
CMOS Standby Current ^{2, 5}
V_CC = V_CC Max, CE# =
RESET# = V_CC ± 0.5V
0.3
5
µA
I_CC4
V_CC RESET# Controlled
CMOS Standby Current ^{2, 5}
V_CC = V_CC Max,
RESET# = V_SS ± 0.5V
0.3
5
µA
V_IL
Input Low Voltage
-0.5
0.8
V
V_IH Input High Voltage
0.7 x V_CC
V_CC + 0.3 V
V_ID
Voltage for Electronic ID and
Temporary Sector Unprotect
V_CC = 5.0V
11.5
12.5
V
V_OL
V_OH
V_LKO
Output Low Voltage
Output High Voltage
Low V_CC Lockout Voltage ³
V_CC = V_CC Min,
I_OL = 5.8 mA
V_CC = V_CC Min,
I_OH = -2.5 mA
V_CC = V_CC Min,
I_OH = -100 µA
0.85 x V_CC
V_CC - 0.4
3.2
0.45
V
V
V
4.2
V
Notes:
1. The I current is listed is typically less than 2 mA/MHz with OE# at V .
CC
IH
2. Maximum I specifications are tested with V = V Max.
CC
CC
CC
3. I_CC active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
5. I_CC3 = 20 µA maximum for industrial and extended temperature versions.
22
Rev. 4.2/May 01