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| HY29F800 Datasheet, PDF (31/40 Pages) Hynix Semiconductor – 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory | |||
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AC CHARACTERISTICS
WE#
Enter Automatic
Erase
DQ[6]
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Erase
Suspend
Read
HY29F800
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 21. DQ[2] and DQ[6] Operation
Sector Protect and Unprotect, Temporary Sector Unprotect
Parameter
JEDEC Std
Description
Speed Option
Unit
- 55 - 70 - 90 - 12
tST Voltage Setup Time
tRSP
RESET# Setup Time for
Temporary Sector Unprotect
Min
4
µs
Min
4
µs
tCE Chip Enable to Output Delay
Max 55 70 90 120 ns
tOE Output Enable to Output Delay
Max 25 30 35 50 ns
tVIDR VID Transition Time forTemporary Sector Unprotect 1 Min
500
ns
tVLHT VID Transition Time for Sector Protect and Unprotect 1 Min
500
ns
tWPP1 Write Pulse Width for Sector Protect
Min
100
µs
tWPP2 Write Pulse Width for Sector Unprotect
Min
100
ms
tOESP OE# Setup Time to WE# Active 1
Min
4
µs
tCSP CE# Setup Time to WE# Active 1
Min
4
µs
Notes:
1. Not 100% tested.
V ID
RESET#
0 or 5V
tVIDR
CE#
tVIDR
0 or 5V
WE#
tRSP
RY/BY#
Figure 22. Temporary Sector Unprotect Timings
Rev. 4.2/May 01
31
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