HY51VS65163HG Datasheet, PDF (3/11 Pages) Hynix Semiconductor – 4M x 16Bit EDO DRAM

ABSOLUTE MAXIMUM RATINGS
HY51V(S)65163HG/HGL
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to Vss
Voltage on Vcc relative to Vss
Short Circuit Output Current
Power Dissipation
Symbol
TA
TSTG
VT
Vcc
IOUT
PT
Rating
Unit
0 ~ 70
o_C
-55 ~ 125
o_C
-0.5 ~ Vcc + 0.5
(Max 4.6V)
V
-0.5 ~ 4.6
V
50
mA
1
W
Note : Operation at above absolute maximum rating can adversely affect device reliability.
Recommended DC OPERATING CONDITIONS (TA=0 to 70 ^oC)
Parameter
Symbol
Min
Power Supply Voltage
Vcc
3.0
Power Supply Voltage
Vss
0
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
-0.3
Note : All voltages are referenced to Vss
1. 6.0V at pulse width 10ns which is measured at Vcc
2. -0.1V at pulse width 10ns which is measured at Vss
Typ.
Max
Unit
3.3
3.6
V
0
0
V
-
Vcc + 0.3
V
-
0.8
V
Note
1,2
2
1
1
Rev.0.1/Apr.01
3