HY5PS561621BLFPE3 Datasheet, PDF (17/34 Pages) Hynix Semiconductor – 256Mb DDR2 SDRAM

1
1HY5PS561621B(L)FP
3.5. Input/Output Capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Symbol
DDR2- 400
DDR2- 533
Min Max
DDR2 667
Min Max
DDR2 800
Min Max
Units
CCK
1.0
2.0
1.0
2.0
1.0
2.0
pF
CDCK
x
0.25
x
0.25
x
0.25
pF
CI
1.0
2.0
1.0
2.0 1.0 1.75
pF
CDI
x
0.25
x
0.25
x
0.25
pF
CIO
2.5
4.0
2.5
3.5
2.5
3.5
pF
CDIO
x
0.5
x
0.5
x
0.5
pF
4. Electrical Characteristics & AC Timing Specification
( 0 ℃ ≤ T_CASE ≤ 95℃; V_DDQ = 1.8 V +/- 0.1V; V_DD = 1.8V +/- 0.1V)
Refresh Parameters
Parameter
Refresh to Active/Refresh command time
Average periodic refresh interval
tREFI
Symbol
tRFC
0 ℃ ≤ T_CASE ≤ 85℃
85℃ < T_CASE ≤ 95℃
Spec
75
7.8
3.9
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Speed
Bin(CL-tRCD-tRP)
Parameter
CAS Latency
tRCD
tRP
tRAS
tRC
DDR2-800
5-5-5
min
5
12.5
12.5
45
57.25
DDR2-667
5-5-5
min
5
15
15
45
60
DDR2-533
4-4-4
min
4
15
15
45
60
DDR2-400
3-3-3
min
5
15
15
40
55
Units
ns
ns
ns
Units
tCK
ns
ns
ns
ns
Rev. 0.2 / Apr. 2008
17