HY5PS561621BLFPE3 Datasheet, PDF(12/34 Page) Hynix Semiconductor

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HY5PS561621BLFPE3 Datasheet, PDF (12/34 Pages) Hynix Semiconductor – 256Mb DDR2 SDRAM

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1HY5PS561621B(L)FP

3.3 Output Buffer Characteristics

3.3.1 Output AC Test Conditions

Symbol

VOTR

Parameter

Output Timing Measurement Reference Level

1. The VDDQ of the device under test is referenced.

SSTL_18 Class II

0.5 * VDDQ

Units

Notes

3.3.2 Output DC Current Drive

Symbol

Parameter

SSTl_18

Units

Notes

IOH(dc) Output Minimum Source DC Current

- 13.4

1, 3, 4

IOL(dc)

Output Minimum Sink DC Current

13.4

2, 3, 4

1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ -

280 mV.

2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.

3. The dc value of VREF applied to the receiving device is set to VTT

4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive

current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18

receiver. The actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm

load line to define a convenient driver current for measurement.

3.3.3 OCD defalut characteristics

Description

Output impedance

Output impedance step size for OCD calibration

Pull-up and pull-down mismatch

Output slew rate

Parameter

Sout

Min

1.5

Nom

Max

1.5

Unit

Notes

ohms

1,2,3

V/ns 1,4,5,6,7,8

Rev. 0.2 / Apr. 2008

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