HYMP512U648 Datasheet, PDF(13/24 Page) Hynix Semiconductor – 240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb 1st ver.

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HYMP512U648 Datasheet, PDF (13/24 Pages) Hynix Semiconductor – 240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb 1st ver.

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1240pin DDR2 SDRAM Unbuffered DIMMs

OUTPUT BUFFER LEVELS

OUTPUT AC TEST CONDITIONS

Symbol

VOTR

Parameter

Output Timing Measurement Reference Level

Notes:

1. The VDDQ of the device under test is referenced.

SSTL_18

0.5 * VDDQ

Units

Notes

OUTPUT DC CURRENT DRIVE

Symbol

IOH(dc)

IOL(dc)

Parameter

Output Minimum Source DC Current

Output Minimum Sink DC Current

SSTl_18

- 13.4

13.4

Units

Notes

1, 3, 4

2, 3, 4

Notes:

1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ

and VDDQ - 280 mV.

2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.

3. The dc value of VREF applied to the receiving device is set to VTT

4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device

drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an

SSTL_18 receiver.

The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define

a convenient driver current for measurement.

Rev. 1.0 / Apr. 2005

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