HY5PS12421BFP-E3 Datasheet, PDF (11/38 Pages) Hynix Semiconductor – 512Mb DDR2 SDRAM

1HY5PS12421B(L)FP
1HY5PS12821B(L)FP
1HY5PS121621B(L)FP
3. AC & DC Operating Conditons
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions (SSTL_1.8)
Symbol
VDD
VDDL
VDDQ
VREF
VTT
Parameter
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
Min.
1.7
1.7
1.7
0.49*VDDQ
VREF-0.04
Rating
Typ.
1.8
1.8
1.8
0.50*VDDQ
VREF
Max.
1.9
1.9
1.9
0.51*VDDQ
VREF+0.04
Units
V
V
V
mV
V
Notes
1
1,2
1,2
3,4
5
1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option.
2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD.
3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the
value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track vari-
ations in VDDQ
4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
5. VTT of transmitting device must track VREF of receiving device.
3.1.2 ODT DC electrical characteristics
PARAMETER/CONDITION
SYMBOL MIN NOM MAX UNITS NOTES
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm Rtt1(eff) 60 75 90 ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm Rtt2(eff) 120 150 180 ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm Rtt3(eff) 40 50 60 ohm
1
Deviation of VM with respect to VDDQ/2
delta VM -6
+6
%
1
Note
1. Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply V_IH (ac) and V_IL (ac) to test pin separately, then measure current I(V_IH
(ac)) and I(V_IL(ac)) respectively. V_IH (ac), V_IL (ac), and VDDQ values defined in SSTL_18
V_IH (ac) - V_IL (ac)
Rtt(eff) =
I(V_IH (ac)) - I(V_IL (ac))
Measurement Definition for VM : Measurement Voltage at test pin(mid point) with no load.
2 x Vm
delta VM =
- 1 x 100%
VDDQ
Rev. 0.7 / Oct. 2007
11