HY5PS12421BFP-E3 Datasheet, PDF (10/38 Pages) Hynix Semiconductor – 512Mb DDR2 SDRAM

1HY5PS12421B(L)FP
1HY5PS12821B(L)FP
1HY5PS121621B(L)FP
2. Maximum DC Ratings
2.1 Absolute Maximum DC Ratings
Symbol
Parameter
VDD _{Voltage on VDD pin relative to Vss}
VDDQ _{Voltage on VDDQ pin relative to Vss}
VDDL _{Voltage on VDDL pin relative to Vss}
V_IN, V_{OUT Voltage on any pin relative to Vss}
T_{STG Storage Temperature}
II
Input leakage current; any input 0V VIN VDD;
all other balls not under test = 0V)
Rating
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
-2 ~ 2
Units
V
V
V
V
°C
Notes
1
1
1
1
1, 2
uA
IOZ
Output leakage current; 0V VOUT VDDQ; DQ
-5 ~ 5
uA
and ODT disabled
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions. Please refer to JESD51-2 standard.
2.2 Operating Temperature Condition
Symbol
tOPER
Parameter
Operating Temperature
Rating
0 to 95
Units
°C
Notes
1,2
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the mea-
surement conditions, please refer to JESD51-2 standard.
2. At tOPER 85~95℃, Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this
temperature range it must be required an EMRS command to change itself refresh rate.
Rev. 0.7 / Oct. 2007
10